IPP65R600E6 Hoja de datos - Inchange Semiconductor
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IPP65R600E6
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Inchange Semiconductor
• DESCRIPTION
• Provide all benefits of a fast switching SJ MOSFET while not
sacrificing ease of use
• FEATURES
• Static drain-source on-resistance:
RDS(on) ≤0.6Ω
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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