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IR2010PBF Hoja de datos - Infineon Technologies

IR2010PBF image

Número de pieza
IR2010PBF

componentes Descripción

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page
20 Pages

File Size
2.3 MB

Fabricante
Infineon
Infineon Technologies Infineon

Description
The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.


FEATUREs
• Floating channel designed for bootstrap operation
• Fully operational to 200V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
• Separate logic supply range from 3.3V to 20V
• Logic and power ground +/-5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Shut down input turns off both channels
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• Outputs in phase with inputs


APPLICATIONs
• Converters
• DC motor drive

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Número de pieza
componentes Descripción
PDF
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