Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode
Power Field-Effect Transistors

16 A and 18 A, 150 V - 200 V rDS(0n) = 0.18Ω and 0.22Ω

FEATUREs:
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device