Power MOS Field-Effect Transistors
N-Channel Enhancement-Mode Power Field-Effect Transistors

25 A and 30 A, 150 V - 200 V rDS(0n) = 0.085Ω and 0.120Ω

FEATUREs:
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device