Description
Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

FEATURES
• Drain Current –ID= 110A@ TC=25℃
•  Drain Source Voltage-
   : VDSS= 55V(Min)
•  Static Drain-Source On-Resistance
   : RDS(on) = 0.008Ω (Max)