Description
The devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.

● Low RDS(on)
● VGS Rated at ±20V
● Sillcon Gate for Fast Switching Speeds
● IDSS, VDS(on), Specified at Elevated Temperature
● Rugged
● Low Drive Requirements
● Ease of Parallelling