IRF520N Hoja de datos - Inchange Semiconductor
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IRF520N
componentes Descripción
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2 Pages
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297.3 kB
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Inchange Semiconductor
• DESCRITION
• Efficient and reliable device for use in a wide variety of applications
• FEATURES
• Static drain-source on-resistance:
RDS(on) ≤0.2Ω
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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