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IRF5Y5305CM Hoja de datos - International Rectifier

IRF5Y5305CM image

Número de pieza
IRF5Y5305CM

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7 Pages

File Size
95.7 kB

Fabricante
IR
International Rectifier IR

Product Summary   
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
   
Features:
■ Low RDS(on)
■ Avalanche Energy Ratings
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Light Weight
   

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Número de pieza
componentes Descripción
PDF
Fabricante
POWER MOSFET THRU-HOLE (TO-257AA)
Ver
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA) ( Rev : 2001 )
Ver
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA)
Ver
International Rectifier
HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)
Ver
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA)
Ver
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA)
Ver
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA)
Ver
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA) ( Rev : 2010 )
Ver
International Rectifier
POWER MOSFET THRU-HOLE (TO-257AA)
Ver
International Rectifier
HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)
Ver
International Rectifier

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