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IRF630 Hoja de datos - STMicroelectronics

IRF630 image

Número de pieza
IRF630

Other PDF
  1996   1999  

PDF
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page
14 Pages

File Size
294 kB

Fabricante
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

General features
■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Gate charge minimized


APPLICATIONs
■ Switching application

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
PDF
Fabricante
N-channel 200V - 0.35Ω- 9A - TO-220 /TO-220FP Mesh Overlay™ Power MOSFET
Ver
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N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP PowerMeshII MOSFET
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N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET
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N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET
Ver
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N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET ( Rev : 2001 )
Ver
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N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET
Ver
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