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IRF6623TR1 Hoja de datos - International Rectifier

IRF6623TR1 image

Número de pieza
IRF6623TR1

componentes Descripción

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page
8 Pages

File Size
156.9 kB

Fabricante
IR
International Rectifier IR

Description
The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

• Application Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Compatible with Existing Surface Mount Techniques

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Número de pieza
componentes Descripción
PDF
Fabricante
HEXFET power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET.
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier

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