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IRF7478QPBF Hoja de datos - International Rectifier

IRF7478QPBF image

Número de pieza
IRF7478QPBF

componentes Descripción

Other PDF
  2007  

PDF
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page
9 Pages

File Size
185.5 kB

Fabricante
IR
International Rectifier IR

Description
These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

● Advanced Process Technology
● Ultra Low On-Resistance
● N Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● 150°C Operating Temperature
● Lead-Free

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Número de pieza
componentes Descripción
PDF
Fabricante
HEXFET power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET.
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier

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