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IRF7521D1PBF Hoja de datos - International Rectifier

IRF7521D1PBF image

Número de pieza
IRF7521D1PBF

componentes Descripción

Other PDF
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page
8 Pages

File Size
182.5 kB

Fabricante
IR
International Rectifier IR

Description
The FETKY™ family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifiers low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc.
The new Micro8™ package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8™ an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8™ will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.


• Co-packaged HEXFET® Power MOSFET and Schottky Diode
• N-Channel HEXFET
• Low VF Schottky Rectifier
• Generation 5 Technology
• Micro8™ Footprint
• Lead-Free

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Número de pieza
componentes Descripción
PDF
Fabricante
MOSFET / Schottky Diode
Ver
Kersemi Electronic Co., Ltd.
FETKY MOSFET / SCHOTTKY DIODE
Ver
International Rectifier
FETKY MOSFET / SCHOTTKY DIODE
Ver
International Rectifier
FETKY MOSFET / SCHOTTKY DIODE
Ver
International Rectifier
FETKY MOSFET / SCHOTTKY DIODE
Ver
International Rectifier
FETKY MOSFET & Schottky Diode
Ver
International Rectifier
FETKY MOSFET & Schottky Diode
Ver
International Rectifier
FETKY MOSFET / SCHOTTKY DIODE
Ver
International Rectifier
Power MOSFET and Schottky Diode
Ver
ON Semiconductor
Power MOSFET and Schottky Diode ( Rev : 2008 )
Ver
ON Semiconductor

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