Description
These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
A pair of IRF7807 devices provides the best cost/performance solution for system voltages, such as 3.3V and 5V

• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses