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IRF820 Hoja de datos - International Rectifier

IRF820 image

Número de pieza
IRF820

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page
6 Pages

File Size
169 kB

Fabricante
IR
International Rectifier IR

DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

Page Link's: 1  2  3  4  5  6 

Número de pieza
componentes Descripción
PDF
Fabricante
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
Ver
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
Ver
International Rectifier
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Ver
Vishay Semiconductors
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Ver
Kersemi Electronic Co., Ltd.
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Ver
Vishay Semiconductors
SMPS MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
Ver
International Rectifier
HEXFET Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A
Ver
International Rectifier

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