IRF830 Hoja de datos - ON Semiconductor
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IRF830
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ON Semiconductor
TMOS POWER FET 4.5 AMPERES 500 VOLTS RDS(on)= 1.5 Ω
This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
•Silicon Gate for Fast Switching Speeds
•Low RDS(on)to Minimize On–Losses, Specified at Elevated Temperature
•Rugged — SOA is Power Dissipation Limited
•Source–to–Drain Diode Characterized for Use with Inductive Loads
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