IRF9230_ Hoja de datos - Samsung
Número de pieza
IRF9230_
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12 Pages
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508.7 kB
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Samsung
FEATURES
• Low RDS(on)
• Improved inductive ruggedness
• Fast switching times
• Rugged polysilicon gate cell structure
• Low input capacitance
• Extended safe operating area
• Improved high temperature reliablility
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