Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

FEATURE
• Advanced Process Technology
• Key Parameters Optimized for PDP Sustain, Energy
   Recovery and Pass Switch Applications
• Low EPULSE Rating to Reduce Power Dissipation in PDP
   Sustain, Energy Recovery and Pass Switch Applications
• Low QG for Fast Response
• High Repetitive Peak Current Capability for Reliable
   Operation
• Short Fall & Rise Times for Fast Switching
• 175°C Operating Junction Temperature for Improved
   Ruggedness
• Repetitive Avalanche Capability for Robustness and
   Reliability