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IRFD1Z0

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Intersil
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These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

They can be operated directly from integrated circuits. Formerly developmental type TA17451.

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Número de pieza
componentes Descripción
PDF
Fabricante
0.6A and 0.45A, 150V and 200V, 1.5 and 2.4 OHM, N-Channel Power MOSFETs
Ver
Harris Semiconductor
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs ( Rev : V2 )
Ver
New Jersey Semiconductor
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs
Ver
Intersil
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs
Ver
New Jersey Semiconductor
1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs
Ver
Harris Semiconductor
4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
Ver
Harris Semiconductor
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
Ver
Harris Semiconductor
2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
Ver
Intersil
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Ver
New Jersey Semiconductor
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Ver
Intersil

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