DESCRIPTION
The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the Power HEXFET design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• Fast Switching
• Ease of Paralleling
• Lead-Free