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IRFF112 Hoja de datos - New Jersey Semiconductor

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IRFF112

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NJSEMI
New Jersey Semiconductor NJSEMI

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, freedom from second breakdown, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.
They are well suited for applications such as switching Dower supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.


FEATUREs:
• FastSwitching
• Low Drive Current
• Ease of Paralleling
• NoSecond Breakdown
• Excellent Temperature Stability

Page Link's: 1  2 

Número de pieza
componentes Descripción
PDF
Fabricante
TO-39(H) PACKAGE SERIES
Ver
Unspecified
2DW230 Thru 2DW236 / TO-39 Package
Ver
Unspecified
NPN General Purpose Medium Power Transistor / TO-39 Package
Ver
Unspecified
NPN TO-39/TO-5
Ver
New Jersey Semiconductor
NPN TO-39 / TO-5
Ver
New Jersey Semiconductor
POWER MOSFETS IN A TO-3 PACKAGE
Ver
Omnirel Corp => IRF
POWER MOSFETS IN A TO-3 PACKAGE
Ver
Omnirel Corp => IRF
POWER MOSFETS IN HERMETIC ISOLATED TO-257AA PACKAGE
Ver
Omnirel Corp => IRF
POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE
Ver
Unspecified
POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE
Ver
Omnirel Corp => IRF

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