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IRFF133 Hoja de datos - GE Solid State

IRFF130 image

Número de pieza
IRFF133

componentes Descripción
Power MOS Field-Effect Transistors

Other PDF
  no available.

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page
5 Pages

File Size
161.5 kB

Fabricante
GESS
GE Solid State GESS

N-Channel Enhancement-Mode Power Field-Effect Transistors

7.0A and 8.0A, 60V-100V rDS(on) = 0.18 Ω and 0.25 Ω

Page Link's: 1  2  3  4  5 

Número de pieza
componentes Descripción
PDF
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2SK612
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2SJ132-Z
MOS FIELD EFFECT POWER TRANSISTORS
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RFP25N05
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GE Solid State
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Power MOS Field-Effect Transistors
Ver
Harris Semiconductor

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