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IRFIBC30 Hoja de datos - International Rectifier

IRFIBC30 image

Número de pieza
IRFIBC30

componentes Descripción

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6 Pages

File Size
168.4 kB

Fabricante
IR
International Rectifier IR

Description
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

• Isolated Package
• High Voltage Isolation = 2.5 KVRMS
• Sink to Lead Creepage Dist. = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance

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Número de pieza
componentes Descripción
PDF
Fabricante
HEXFET power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET.
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier
HEXFET Power MOSFET
Ver
International Rectifier

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