Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• Isolated Package
• High Voltage Isolation = 2.5 KVRMS
• Sink to Lead Creepage Dis. = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead-Free