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IRFIZ34G Hoja de datos - International Rectifier

IRFIZ34G image

Número de pieza
IRFIZ34G

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page
6 Pages

File Size
273.1 kB

Fabricante
IR
International Rectifier IR

DESCRIPTION
Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsinkusing a single clip or by a single screw fixing.

• Isolated Package
• High Voltage Isolation=2.5KVRMS
• Sink to Lead Creepage Dist.=4.8mm
• 175 °C Operating Temperature
• Dynamic dV/dt Rating
• Low Thermal Resistance

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Número de pieza
componentes Descripción
PDF
Fabricante
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
Ver
International Rectifier
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Ver
Vishay Semiconductors
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Ver
International Rectifier
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
Ver
International Rectifier
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Ver
Vishay Semiconductors
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
Ver
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
Ver
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
Ver
International Rectifier
Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)
Ver
International Rectifier

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