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IRFIZ48G(2022) Hoja de datos - Vishay Semiconductors

IRFIZ48G image

Número de pieza
IRFIZ48G

componentes Descripción

Other PDF
  2008   lastest PDF  

PDF
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page
10 Pages

File Size
591.2 kB

Fabricante
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.


FEATURES
• Isolated package
• High voltage isolation = 2.5 kVRMS (t = 60 s;
   f = 60 Hz)
• Sink to lead creepage distance = 4.8 mm
• 175 °C operating temperature
• Dynamic dV/dt rating
• Low thermal resistance
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912


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