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IRFM360(2002) Hoja de datos - International Rectifier

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IRFM360

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7 Pages

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492.8 kB

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IR
International Rectifier IR

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.


FEATUREs:
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Electrically Isolated
■ Dynamic dv/dt Rating
■ Light-weight

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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) ( Rev : 2001 )
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