DESCRIPTION
This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY"1 process. This technology matches and improves the performances compared with standard parts from various sources.

. TYPICAL RDS(on)= 0.33 Ω
. EXTREMELY HIGH dv/dt CAPABILITY
. 100% AVALANCHE TESTED
. VERY LOWINTRINSIC CAPACITANCES
. GATE CHARGE MINIMIZED

APPLICATIONS
. HIGH CURRENT SWITCHING
. UNINTERRUPTIBLE POWER SUPPLY (UPS)
. DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.