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IRFP9240 Hoja de datos - International Rectifier

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Número de pieza
IRFP9240

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6 Pages

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Fabricante
IR
International Rectifier IR

DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

Page Link's: 1  2  3  4  5  6 

Número de pieza
componentes Descripción
PDF
Fabricante
HEXFET power MOSFET. VDSS = 900 V, RDS(on) = 1.6 Ohm, ID = 6.7 A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 0.075 Ohm, ID = 38 A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.078 Ohm, ID = 47 A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.85 Ohm, ID = 8.8 A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.135 Ohm, ID = 32 A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 0.14 Ohm, ID = 23 A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.7 A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A
Ver
International Rectifier
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A
Ver
International Rectifier

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