Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.

FEATUREs
• Key Parameters Optimized for Class-D Audio
   Amplifier Applications
• Low RDSON for Improved Efficiency
• Low QG and QSW for Better THD and Improved
   Efficiency
• Low QRR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
   Ruggedness
• Can Deliver up to 300W per Channel into 4Ω Load in
   Half-Bridge Configuration Amplifier