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IRFV360 Hoja de datos - International Rectifier

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IRFV360

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IR
International Rectifier IR

400 Volt, 0.20 Ohm HEXFET

The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


FEATUREs
◾ Repetitive Avalanche Rating
◾ Dynamic dv/dt Rating
◾ Isolated and Hermetically Sealed
◾ Alternative to TO-3 Package
◾ Simple Drive Requirements
◾ Ease of Paralleling
◾ Ceramic Eyelets


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componentes Descripción
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Fabricante
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRNANSISTOR
Ver
International Rectifier
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET® TRANSISTOR
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR ( Rev : 1998 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR
Ver
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
Ver
International Rectifier

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