Features
• UltraFast: Optimized for high operating
   up to 80 kHz in hard switching, >200 kHz in
   resonant mode
• Generation 4 IGBT design provide tighter
   parameter distribution and higher efficiency than
   previous Generation
• IGBT co-packaged with HEXFRED™ ultrafast,
   ultra-soft-recovery anti-parallel diodes for use in
   bridge configurations
• Industry standard TO-220AB package
• Lead-Free 

Benefits
• Generation 4 IGBTs offer highest efficiencies
   available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
   IGBTs. Minimized recovery characteristics require
   less/no snubbing