INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT

FEATUREs
• High short circuit rating optimized for motor control
   tsc = 10 μs, @360V VCE(start), TJ = 125 °C
   VGE = 15V
• Conbines low conduction losses with high
   switching speed
• Latest generation design provides tighter parameter
   distribution and higher efficiency than previous
   generations
• Lead-Free