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IRG4BC30W-S Hoja de datos - International Rectifier

IRG4BC30W-S image

Número de pieza
IRG4BC30W-S

Other PDF
  no available.

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page
8 Pages

File Size
174.3 kB

Fabricante
IR
International Rectifier IR

Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Page Link's: 1  2  3  4  5  6  7  8 

Número de pieza
componentes Descripción
PDF
Fabricante
Short Circuit Rated UltraFast IGBT VCES= 600V VCE(on) typ. =2.27V @VGE= 15V, IC= 9.0A
Ver
International Rectifier
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A
Ver
Vishay Semiconductors
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A ( Rev : 2016 )
Ver
Vishay Semiconductors
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A
Ver
Vishay Semiconductors
600V Insulated Gate Bipolar Transistor
Ver
Unspecified
20A, 600V Insulated Gate Bipolar Transistor
Ver
Unspecified
40A, 600V Insulated Gate Bipolar Transistor
Ver
Unspecified
Insulated Gate Bipolar Transistor
Ver
ON Semiconductor
Insulated Gate Bipolar Transistor
Ver
ON Semiconductor
Insulated Gate Bipolar Transistor
Ver
Toshiba

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