datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  International Rectifier  >>> IRG4PC40W PDF

IRG4PC40W Hoja de datos - International Rectifier

G4PC40W image

Número de pieza
IRG4PC40W

componentes Descripción

Other PDF
  no available.

PDF
DOWNLOAD     

page
8 Pages

File Size
113.7 kB

Fabricante
IR
International Rectifier IR

Benefits
• Lower switching losses allow more cost-effective
   operation than power MOSFETs up to 150 kHz
   ("hard switched" mode)
• Of particular benefit to single-ended converters and
   boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
   recombination make these an excellent option for
   resonant mode switching as well (up to >>300 kHz)
  
Features
• Designed expressly for Switch-Mode Power
   Supply and PFC (power factor correction)
   applications
• Industry-benchmark switching losses improve
   efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
   tighter parameters distribution, exceptional reliability

Page Link's: 1  2  3  4  5  6  7  8 

Número de pieza
componentes Descripción
PDF
Fabricante
Insulated Gate Bipolar Transistor
Ver
ON Semiconductor
Insulated Gate Bipolar Transistor
Ver
ON Semiconductor
Insulated Gate Bipolar Transistor
Ver
Toshiba
Insulated Gate Bipolar Transistor
Ver
Motorola => Freescale
Insulated Gate Bipolar Transistor
Ver
Renesas Electronics
Insulated Gate Bipolar Transistor
Ver
International Rectifier
Insulated Gate Bipolar Transistor ( Rev : 2013 )
Ver
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Ver
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Ver
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Ver
International Rectifier

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]