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IRG4PH40UDPBF Hoja de datos - International Rectifier

IRG4PH40UDPBF image

Número de pieza
IRG4PH40UDPBF

Other PDF
  2004  

PDF
DOWNLOAD     

page
10 Pages

File Size
252.8 kB

Fabricante
IR
International Rectifier IR

Features
• UltraFast: Optimized for high operating
   frequencies up to 40 kHz in hard switching,
   >200 kHz in resonant mode
• New IGBT design provides tighter
   parameter distribution and higher efficiency than
   previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
   ultra-soft-recovery anti-parallel diodes for use in
   bridge configurations
• Industry standard TO-247AC package
• Lead-Free


Benefits
• Higher switching frequency capability than
   competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
   IGBTs . Minimized recovery characteristics require
      less/no snubbing


Número de pieza
componentes Descripción
PDF
Fabricante
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Ver
Infineon Technologies
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Ver
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Ver
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Ver
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Ver
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Ver
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Ver
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Ver
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Ver
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Ver
International Rectifier

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