Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high current applications.

FEATUREs
• Short circuit rated - 10µs @ 125°C, VGE= 15V
• Switching-loss rating includes all "tail" losses
•  Optimized for high operating frequency (over 5kHz)
    See Fig. 1 for Current vs. Frequency curve