100V, N-CHANNEL RAD Hard™ HEXFET® TECHNOLOGY

International Rectifiers RADHard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. 

FEATUREs
◾ Single Event Effect (SEE) Hardened
◾ Low RDS(on)
◾ Low Total Gate Charge
◾ Proton Tolerant
◾ Simple Drive Requirements
◾ Hermetically Sealed
◾ Ceramic Package
◾ Light Weight
◾ Surface Mount