200V, N-CHANNEL
Rad Hard™ HEXFET® TECHNOLOGY

International Rectifiers RADHard HEXFET® technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effects(SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

FEATUREs:
■ Single Event Effect (SEE) Hardened
■ Low RDS(on)
■ Low Total Gate Charge
■ Proton Tolerant
■ Simple Drive Requirements
■ Ease of Paralleling
■ Ceramic Package
■ Light Weight
■ Surface Mount