-200 Volt, 0.8Ω, RAD HARD HEXFET

International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. In addition these devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

FEATUREs:
◾ Radiation Hardened up to 1 x 105 Rads (Si)
◾ Single Event Burnout (SEB) Hardened
◾ Single Event Gate Rupture (SEGR) Hardened
◾ Gamma Dot (Flash X-Ray) Hardened
◾ Neutron Tolerant
◾ Identical Pre- and Post-Electrical Test Conditions
◾ Repetitive Avalanche Rating
◾ Dynamic dv/dt Rating
◾ Simple Drive Requirements
◾ Ease of Paralleling
◾ Hermetically Sealed
◾ Surface Mount
◾ Light-weight