DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package.

FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Logic-level gate drive
• RDS (on) specified at VGS = 4 V and 5 V
• 175°C operating temperature
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912