BVDSS = 200 V
RDS(on) = 0.8 Ω
ID = 4.1 A

FEATURES
● Logic-Level Gate Drive
● Avalanche Rugged Technology
● Rugged Gate Oxide Technology
● Lower Input Capacitance
● Improved Gate Charge
● Extended Safe Operating Area
● Lower Leakage Current : 10 μA (Max.) @ VDS = 200V
● Lower RDS(ON) : 0.609Ω (Typ.)