DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

FEATURES
• Dynamic dV/dt rating
• Logic-level gate drive
• RDS(on) specified at VGS = 4 V and 5 V
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912