FEATURES
■ Logic-Level Gate Drive
■ Avalanche Rugged Technology
■ Rugged Gate Oxide Technology
■ Lower Input Capacitance
■ Improved Gate Charge
■ Extended Safe Operating Area
■ Lower Leakage Current : 10 μA (Max.) @ VDS = 60V
■ Lower RDS(ON) : 0.02 Ω (Typ.)