Description
The IRSF3011 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections.
The on-chip protection circuit latches off the Power MOSFET in case the drain current exceeds 7A (typical) or the junction temperature exceeds 165°C (typical) and keeps it off until the input is driven low. The drain to source voltage is actively clamped at 55V (typical), prior to the avalanche of Power MOSFET, thus improving its performance during turn-off with inductive loads.
The input current requirements are very low (300µA) which makes the IRSF3011 compatible with most existing designs based on standard Power MOSFETs.

FEATUREs
• Extremely rugged for harsh operating environments
• Over-temperature protection
• Over-current protection
• Active drain-to-source clamp
• ESD protection
• Lead compatible with standard Power MOSFET
• Low operating input current
• Monolithic construction

APPLICATIONs
• Solenoid Driver
• DC Motor Driver