GENERAL DESCRIPTION
The IS39LV512/010/040 are 512 Kbit/1 Mbit/4 Mbit 3.0 Volt-only Flash Memories. These devices are designed to use a single low voltage, range from 2.70 Volt to 3.60 Volt, power supply to perform read, erase and program operations. The 12.0 Volt VPP power supply for program and erase operations are not required. The devices can be programmed in standard EPROM programmers as well.

FEATURES
● Single Power Supply Operation
   - Low voltage range: 2.70 V - 3.60 V
● Memory Organization
   - IS39LV512: 64K x 8 (512 Kbit)
   - IS39LV010: 128K x 8 (1 Mbit)
   - IS39LV040: 512K x 8 (4 Mbit)
● High Performance Read
   - 70 ns access time
● Cost Effective Sector/Block Architecture
   - Uniform 4 Kbyte sectors
   - Uniform 64 Kbyte blocks (sector group - except
      IS39LV512)
● Data# Polling and Toggle Bit Features
● Hardware Data Protection
● Automatic Erase and Byte Program
   - Build-in automatic program verification
   - Typical 16 µs/byte programming time
   - Typical 55 ms sector/block/chip erase time
● Low Power Consumption
   - Typical 4 mA active read current
   - Typical 8 mA program/erase current
   - Typical 0.1 µA CMOS standby current
● High Product Endurance
   - Guarantee 100,000 program/erase cycles per
      single sector (preliminary)
   - Minimum 20 years data retention
● Industrial Standard Pin-out and Packaging
   - 32-pin (8 mm x 14 mm) VSOP
   - 32-pin PLCC
   - Optional lead-free (Pb-free) package
● Operation temperature range
   - IS39LV512/010 -40oC~+85oC
   - IS39LV040 0oC~+85oC