DESCRIPTION
TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
    — Auto refresh Mode: 1,024 cycles /16 ms
    — RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available