DESCRIPTION
TheISSIIS62WV12816ALL/ IS62WV12816BLL are high speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.

FEATURES
• High-speed access time: 45ns, 55ns, 70ns
• CMOS low power operation
   – 36 mW (typical) operating
   – 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
   – 1.65V--2.2V VDD (62WV12816ALL)
   – 2.5V--3.6V VDD (62WV12816BLL)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• 2CS Option Available
• Lead-free available