ISCN59P Hoja de datos - Inchange Semiconductor
Número de pieza
ISCN59P
componentes Descripción
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2 Pages
File Size
195.1 kB
Fabricante
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V (Min)
• Good Linearity of hFE
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for use in DC/DC converter and general purpose
applications.
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