ISP80N08S2L Hoja de datos - Inchange Semiconductor
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ISP80N08S2L
componentes Descripción
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Inchange Semiconductor
FEATURES
• Drain Current –ID= 80A@ TC=25℃
• Drain Source VoltageVDSS= 75V(Min)
• Static Drain-Source On-Resistance
RDS(on) :7.1mΩ (Max)
• 175° C operating temperature
• Advanced trench process technology
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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