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IXBF32N300 Hoja de datos - IXYS CORPORATION

IXBF32N300 image

Número de pieza
IXBF32N300

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5 Pages

File Size
190.6 kB

Fabricante
IXYS
IXYS CORPORATION IXYS

Features
• Silicon Chip on Direct-Copper Bond (DCB) Substrate
• Isolated Mounting Surface
• 3000V Electrical Isolation
• High Blocking Voltage
• International Standard Package
• Low Conduction Losses

Advantages
• Low Gate Drive Requirement
• High Power Density


APPLICATIONs:
• Switched-Mode and Resonant-Mode Power Supplies
• Uninterruptible Power Supplies (UPS)
• Laser Generators
• Capacitor Discharge Circuits
• AC Switches

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PDF
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High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
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IXYS CORPORATION
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
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IXYS CORPORATION
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
Ver
IXYS CORPORATION
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
Ver
IXYS CORPORATION
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
Ver
IXYS CORPORATION
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
Ver
IXYS CORPORATION

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